Parasitic Substrate Coupling in High Voltage Integrated Circuits by Pietro Buccella Camillo Stefanucci Maher Kayal & Jean-Michel Sallese

Author:Pietro Buccella, Camillo Stefanucci, Maher Kayal & Jean-Michel Sallese
Language: eng
Format: epub
Publisher: Springer International Publishing, Cham

In the second configuration, the injected current level is 150 mA, corresponding to . After 20 μs the P+ contacts collect 49% of the injected currents, while 52.5 mA flows through the nearest collector N 2 (35%) and only 24 mA to the farthest collector N 3 (16%). This means that depending on the minority carrier concentration, different situations are predicted. Therefore, in high-injection regime, the P+ contacts are more efficient to collect parasitic currents than in the low-injection case.

The GLD substrate netlist requires only 10 ms per time step to perform this transient simulation, while the simulation time needed for TCAD was around 15 s, i.e., a gain of about 1000.

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